Method of forming semiconductor device having a dual material redistribution line

ABSTRACT

A method of making a semiconductor device includes plating a first conductive material over a first passivation layer, wherein the first conductive material fills an opening in the first passivation layer and electrically connects to an interconnect structure. The method further includes planarizing the first conductive material, wherein a top surface of the planarized first conductive material is coplanar with a top surface of the first passivation layer. The method further includes depositing a second conductive material over the first passivation layer, wherein the second conductive material is different from the first conductive material, and the second conductive material is electrically connected to the first conductive material in the opening. The method further includes patterning the second conductive material to define a redistribution line (RDL).

PRIORITY CLAIM

The present application is a divisional of U.S. application Ser. No.15/223,492, filed Jul. 29, 2016, which is incorporated herein byreference in its entirety.

BACKGROUND

A semiconductor die is connectable to other devices external to thesemiconductor die through different types of packaging including wirebonding or flip chip packaging. The semiconductor die includesmetallization layers comprising metal layers, dielectric layers, metalvias, re-distribution layers, and post-passivation interconnects, insome instances. Wire bonding connects integrated circuits (ICs) tosubstrates directly via the wiring, while the flip chip packaging (orwafer-level chip scale package (WLCSP)) solder bumps or pillars areformed by initially forming a layer of underbump metallization on thesemiconductor die and then placing the solder bump or pillar onto theunderbump metallization. A reflow operation is performed in order tobond the solder bump or pillar with the external device.

A redistribution layer (RDL) is used to adjust a location of the solderbump or pillar with respect to a top metal layer of the semiconductordie. The RDL is used to fan-out connections to the external device andto reduce the stress on the top metal layer of the semiconductor dieduring a bonding process.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a cross-sectional view of a semiconductor device according tosome embodiments.

FIG. 2A is a cross-sectional view of a semiconductor device according tosome embodiments.

FIG. 2B is a cross-sectional view of a semiconductor device according tosome embodiments.

FIG. 3 is a cross-sectional view of a semiconductor device according tosome embodiments.

FIG. 4 is a flow chart of a method of making a semiconductor deviceaccording to some embodiments.

FIGS. 5A-5F are cross-sectional views of a semiconductor device duringvarious stages of production according to some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

A redistribution layer (RDL) is used to connect a semiconductor deviceto an external device. In some instances, the RDL is formed directly ona top metal layer of an interconnect structure of the semiconductordevice. A passivation layer separates a portion of the RDL from adielectric material of the interconnect structure of the semiconductordevice and the RDL is electrically connected to the top metal layer ofthe interconnect structure by an RDL via. Forming the RDL and RDL via ina single formation process, such as by sputtering deposition ofaluminum, often results in a recess in the RDL at a location above theRDL via. As a result of the recess in the RDL, a second passivationlayer over the RDL often has a void above the RDL via. The void in thepassivation layer increases a risk of oxidation of the RDL. For example,in some instances, liquids from later processes flow into the void anddamage the RDL, such as by causing pin holes in the RDL. The pin holesincrease the resistance of the RDL and negatively impact the ability ofthe RDL to transfer a signal from the semiconductor device to theexternal device.

The current description uses a multi-step process for forming an RDL andan RDL via. This multi-step process helps to avoid recesses in the RDLat the location of the RDL via and consequently also reduces the risk ofvoids in a passivation layer over the RDL. The passivation layer overthe RDL has a flat surface over the RDL, which helps to reduce errors ina manufacturing process for the semiconductor device.

FIG. 1 is a cross-sectional view of a semiconductor device 100 inaccordance with some embodiments. Semiconductor device 100 includes atop metal layer 102. The top metal layer 102 is a top-most layer of aninterconnect structure of semiconductor device 100. A first passivationlayer 104 is over the top metal layer 102. An RDL via 106 is located inan opening in the first passivation layer 104. RDL via 106 iselectrically connected to top metal layer 102. An RDL 108 is over RDLvia 106 and extends over a top surface of first passivation layer 104.RDL 108 is electrically connected to top metal layer 102 through RDL via106. RDL 108 has a substantially flat top surface along an entirety ofRDL 108. Substantially flat means that the surface is flat with theexception of unavoidable surface roughness resulting from amanufacturing process for forming RDL 108. A second passivation layer110 is over RDL 108. Second passivation layer 110 contacts firstpassivation layer 104 beyond a periphery of RDL 108. An entirety ofsecond passivation layer 110 over RDL 108 has a substantially flat topsurface.

In some embodiments, semiconductor device 100 includes active devices,such as transistors. In some embodiments, semiconductor device 100includes passive devices, such as resistors or capacitors. In someembodiments, semiconductor device 100 is an interposer. The interconnectstructure of semiconductor device 100 is used to connect variouselements of semiconductor device 100 together in order to route a signalfrom one element to another.

Top metal layer 102 electrically connects RDL 108 to other elements ofsemiconductor device 100 through the interconnect structure. In someembodiments, top metal layer 102 includes copper or a copper alloy. Insome embodiments, top metal layer 102 includes a material other thancopper, such as aluminum, tungsten, gold or another suitable material.In some embodiments, top metal layer 102 is formed using a damasceneprocess, such as a dual damascene process. In some embodiments, topmetal layer 102 is formed by electroplating, physical vapor deposition(PVD), sputtering, chemical vapor deposition (CVD) or another suitableformation process. Top metal layer 102 is located within a dielectricmaterial of the interconnect structure.

First passivation layer 104 extends over top metal layer 102 and helpsto prevent oxidation of top metal layer 102. In some embodiments, firstpassivation layer 104 includes silicon oxide, silicon nitride,polyimide, undoped silicate glass (USG), fluorinated silicate glass(FSG) or another suitable material. In some embodiments, firstpassivation layer 104 is a same material as the dielectric material ofthe interconnect structure. In some embodiments, first passivation layer104 is a different material from the dielectric material of theinterconnect structure. In some embodiments, first passivation layer isformed by spin-on coating, PVD, sputtering, CVD or another suitableformation process. In some embodiments, a thickness of first passivationlayer 104 ranges from about 200 nanometers (nm) to about 1800 nm. Insome embodiments, the thickness of first passivation layer 104 rangesfrom 400 nm to about 1200 nm. If the thickness of first passivationlayer 104 is too large, an aspect ratio of the opening for forming RDLvia 106 increases and becomes more difficult to fill, in some instances.If the thickness of first passivation layer 104 is too small, firstpassivation layer 104 does not adequately protect top metal layer 102from oxidation, in some instances.

In some embodiments, a first etch stop layer (not shown) is locatedbetween first passivation layer 104 and top metal layer 102. The firstetch stop layer has a different material from first passivation layer104 to provide a different etch selectivity from first passivation layer104. In some embodiments, the first etch stop layer includes siliconoxide, silicon nitride, silicon oxynitride, silicon carbide or anothersuitable material. RDL via 106 connects to top metal layer 102 throughan opening in the first etch stop layer which is aligned with theopening in first passivation layer 104. In some embodiments, the firstetch stop layer is formed using sputtering, PVD, CVD or another suitableformation process. In some embodiments, a thickness of the first etchstop layer ranges from about 10 nm to about 150 nm. In some embodiments,the thickness of the first etch stop layer ranges from about 35 nm toabout 120 nm. If a thickness of the first etch stop layer is too large,then an aspect ratio of the opening for forming RDL via 106 is too largeor a size of semiconductor device 100 is needlessly increased, in someinstances. If the thickness of the first etch stop layer is too small,etch stop layer will not be capable of protecting top metal layer 102during an etching process performed on first passivation layer 104, insome instances.

RDL via 106 fills the opening in first passivation layer 104 andelectrically connects to top metal layer 102. A top surface of RDL via106 is substantially coplanar with the top surface of first passivationlayer 104. The coplanar relationship between the top surface of RDL via106 and the top surface of first passivation layer 104 helps to avoidrecesses in RDL 108 in comparison with other approaches. In someembodiments, RDL via 106 includes copper or a copper alloy. In someembodiments, RDL via 106 includes tungsten, gold or another suitablematerial. In some embodiments, RDL via 106 is a same material as topmetal layer 102. In some embodiments, RDL via 106 is a differentmaterial from top metal layer 102. In some embodiments, RDL via 106 isformed by electroplating. In some embodiments, RDL via 106 is formed bysputtering, PVD, CVD or another suitable formation process.

In some embodiments which include an etch stop layer, a thickness of RDLvia 106 is greater than the thickness of first passivation layer 104. Insome embodiments, the thickness of RDL via 106 is equal to the thicknessof first passivation layer 104. In some embodiments, the thickness ofRDL via 106 ranges from about 200 nm to about 1800 nm. In someembodiments, the thickness of RDL via 106 ranges from about 400 nm toabout 1200 nm. If the thickness of RDL via 106 is too large, a size ofsemiconductor device 100 is needlessly increased and a delay for asignal traveling along RDL via 106 is increased due to the increasedthickness of RDL via 106, in some instances. If the thickness of RDL via106 is too small, then the top surface of RDL via 106 is not coplanarwith the top surface of first passivation layer 104 or the thickness offirst passivation layer 104 is too small to prevent oxidation of topmetal layer 102, in some instances.

RDL 108 extends over first passivation layer 104 and electricallyconnects to RDL via 106. A bottom surface of RDL 108 is substantiallyflat because the top surface of RDL via 106 and the top surface of firstpassivation layer 104 are coplanar. In addition, a top surface of RDL108 is substantially flat. The lack of a recess in the top surface ofRDL 108 helps to prevent voids in second passivation layer 110 and theresulting pinhole oxidation of RDL 108. RDL 108 extends beyond RDL via106 on both sides of RDL via 106. In some embodiments, RDL 108 includesan edge aligned with an edge of RDL via 106 and extends beyond RDL via106 in only a single direction.

A material of RDL 108 is different from a material of RDL via 106. Insome embodiments, RDL 108 includes aluminum. In some embodiments, RDL108 includes tungsten, gold or another suitable material. In someembodiments, the material of RDL 108 is a same material as top metallayer 102. In some embodiments, RDL 108 is a different material from topmetal layer 102. A process for forming RDL 108 is different from aprocess for forming RDL via 106. In some embodiments, RDL 108 is formedusing sputtering. In some embodiments, RDL 108 is formed using PVD, CVDor another suitable formation process.

In some embodiments, a thickness of RDL 108 ranges from about 700 nm toabout 4200 nm. In some embodiments, the thickness of RDL 108 ranges fromabout 1000 nm to about 3600 nm. If the thickness of RDL 108 is toosmall, a resistance of RDL 108 is increased and signal integrity isdecreased, in some instances. If the thickness of RDL 108 is too large,a size of semiconductor device 100 is needlessly increased, in someinstances.

Second passivation layer 110 extends over RDL 108 and over firstpassivation layer 104. Second passivation layer 110 helps to preventoxidation of RDL 108. A top surface of second passivation layer 110 overRDL 108 is substantially flat. The substantially flat top surface ofsecond passivation layer 110 omits voids that occur in other deviceswhich lead to pinhole oxidation of RDL 108. Omitting voids in secondpassivation layer 110 improves the reliability of semiconductor device100 in comparison with other semiconductor devices.

In some embodiments, second passivation layer 110 includes siliconoxide, silicon nitride, polyimide, undoped silicate glass (USG),fluorinated silicate glass (FSG) or another suitable material. In someembodiments, second passivation layer 110 is a same material as thedielectric material of the interconnect structure. In some embodiments,second passivation layer 110 is a different material from the dielectricmaterial of the interconnect structure. In some embodiments, secondpassivation layer 110 is a same material as first passivation layer 104.In some embodiments, second passivation layer 110 is a differentmaterial from first passivation layer 104. In some embodiments, secondpassivation layer 110 is formed by spin-on coating, PVD, sputtering, CVDor another suitable formation process. In some embodiments, secondpassivation layer 110 is formed using a same process as firstpassivation layer 104. In some embodiments, second passivation layer 110is using a different process from first passivation layer 104.

In some embodiments, a thickness of second passivation layer 110 rangesfrom about 200 nm to about 2000 nm. In some embodiments, the thicknessof second passivation layer 110 ranges from 400 nm to about 1600 nm. Ifthe thickness of second passivation layer 110 is too large, an aspectratio of an opening to expose RDL 108 increases and becomes moredifficult to fill, in some instances. If the thickness of secondpassivation layer 110 is too small, second passivation layer 110 doesnot adequately protect RDL 108 from oxidation, in some instances. Insome embodiments, second passivation layer 110 has a same thickness asfirst passivation layer 104. In some embodiments, second passivationlayer 110 has a different thickness from first passivation layer 104.

In some embodiments, a second etch stop layer is over second passivationlayer 110. The second etch stop layer has a different material fromsecond passivation layer 110, to provide a different etch selectivityfrom second passivation layer 110. In some embodiments, the second etchstop layer includes silicon oxide, silicon nitride, silicon oxynitride,silicon carbide or another suitable material. In some embodiments, amaterial of the second etch stop layer is a same material as the firstetch stop layer. In some embodiments, the material of the second etchstop layer is different from the material of the first etch stop layer.

A bump structure connects to RDL 108 through an opening in the secondetch stop layer which is aligned with an opening in second passivationlayer 110. In some embodiments, the second etch stop layer is formedusing sputtering, PVD, CVD or another suitable formation process. Insome embodiments, a thickness of the second etch stop layer ranges fromabout 200 nm to about 2000 nm. In some embodiments, the thickness of thesecond etch stop layer ranges from about 300 nm to about 1200 nm. If athickness of the second etch stop layer is too large, then an aspectratio of the opening for exposing a portion of RDL 108 is too large or asize of semiconductor device 100 is needlessly increased, in someinstances. If the thickness of the second etch stop layer is too small,second etch stop layer will not be capable of protecting secondpassivation layer 110 during an etching process, in some instances. Insome embodiments, the thickness of the second etch stop layer is a samethickness as the first etch stop layer. In some embodiments, thethickness of the second etch stop layer is different from the thicknessof the first etch stop layer.

By using separate formation processes for RDL via 106 and RDL 108,semiconductor device 100 is able to avoid a recess in a top surface ofRDL 108 over RDL via 106 and the resulting void in second passivationlayer 110. As a result, semiconductor device 100 is more resistant topinhole oxidation of RDL 108 in comparison with other devices which havea recess in a top surface of RDL 108 and/or a void in second passivationlayer 110.

FIG. 2A is a cross-sectional view of a semiconductor device 200 inaccordance with some embodiments. Semiconductor device 200 includes someof the same elements as semiconductor device 100; and the same elementshave a same reference number. In comparison with semiconductor device100, semiconductor device 200 includes an RDL 208 extending across twoRDL vias 206 a and 206 b. RDL vias 206 a and 206 b are connected to asame top metal layer 102. Semiconductor device 200 includes two RDL vias206 a and 206 b; however, in some embodiments, semiconductor device 200includes more than two RDL vias.

Including multiple RDL vias 206 a and 206 b helps to reduce resistancebetween RDL vias 206 a and 206 b and RDL 208 in comparison with thestructure of semiconductor device 100. A top surface of both RDL vias206 a and 206 b is substantially coplanar with the top surface of firstpassivation layer 104. RDL vias 206 a and 206 b have a same width. Insome embodiments, a width of RDL via 206 a is different from a width ofRDL via 206 b. RDL 208 extends beyond both RDL vias 206 a and 206 b inboth directions. In some embodiments, RDL 208 includes an edge alignedwith an edge of RDL via 206 a or RDL via 206 b. In some embodiments, RDL208 includes a first edge aligned with an edge of RDL via 206 a and asecond edge aligned with an edge of RDL via 206 b.

FIG. 2B is a cross-sectional view of a semiconductor device 200′ inaccordance with some embodiments. Semiconductor device 200′ includessome of the same elements as semiconductor device 100; and the sameelements have a same reference number. In comparison with semiconductordevice 200, semiconductor device 200′ includes a dielectric material 220of an interconnect structure between top metal layer 202 a and top metallayer 202 b. RDL via 206 a′ is electrically connected to top metal layer202 a; and RDL via 206 b′ is electrically connected to top metal layer202 b. In some embodiments, semiconductor device 200′ includes multipleRDL vias connected to at least one of top metal layer 202 a or top metallayer 202 b.

Dielectric material 220 insulates top metal layer 202 a from top metallayer 202 b. Including dielectric material 220 helps semiconductordevice 200′ to connect separate components to RDL 208. For example, afirst active device is electrically connected to RDL 208 through topmetal layer 202 a; while a second active device, separate from the firstactive device, is electrically connected to RDL 208 through top metallayer 202 b. In some embodiments, dielectric material 220 includessilicon oxide, silicon nitride, silicon oxynitride, silicon carbide oranother suitable dielectric material. In some embodiments, a material ofdielectric material 220 is a same material as at least one of firstpassivation layer 104 or second passivation layer 110. In someembodiments, the material of dielectric material 220 is different fromboth first passivation layer 104 and second passivation layer 110.

FIG. 3 is a cross-sectional view of a semiconductor device 300 inaccordance with some embodiments. Semiconductor device 300 includes someof the same elements as semiconductor device 100; and same elements havea same reference number. In comparison with semiconductor device 100,semiconductor device 300 includes a landing region 330 on RDL 108; and abump structure 340 and an under bump metallurgy (UBM) layer 350 forconnecting RDL 108 to the external device. Landing region 330 is spacedaway from RDL via 106 so that none of landing region 330 overlaps RDLvia 106.

Landing region 330 is a portion of RDL 108 exposed by an opening insecond passivation layer 110. In some embodiments, the opening in secondpassivation layer 110 is formed by etching second passivation layer 110.In some embodiments, a photoresist is deposited over second passivationlayer 110. The photoresist is then patterned to define a location of theopening in second passivation layer 110 for forming landing region 330.Semiconductor device 300 includes a single landing region 330. In someembodiments, semiconductor device 300 includes multiple landing regions.In some embodiments, a first landing region is located on a first sideof RDL via 106 and a second landing region is located on a second sideof RDL via 106 opposite the first side.

Bump structure 340 is a solder bump. In some embodiments, bump structureincludes a copper pillar. Bump structure is used to electrically connectsemiconductor device 300 to the external device using a reflow process.Semiconductor device 300 includes a single bump structure 340. In someembodiments, semiconductor device 300 includes multiple bump structuresin a same landing region 330.

UBM layer 350 is used to improve adhesion between bump structure 340 andRDL 108, and to prevent diffusion of materials of bump structure 340into RDL 108. In some embodiments, UBM layer 350 includes multiplelayers. In some embodiments, UBM layer 350 includes a diffusion barrierlayer and a seed layer. In some embodiments, the seed layer comprisescopper, copper alloys, silver, gold, aluminum or another suitablematerial. In some embodiments, a thickness of the seed layer ranges fromabout 100 nm to about 1000 nm. If the thickness of the seed layer is toolarge, a size of semiconductor device 300 is needlessly increased, insome instances. If the thickness of seed layer is too small, the seedlayer does not provide sufficient adhesion between bump structure 340and RDL 108, in some instances. In some embodiments, the diffusionbarrier layer includes titanium, titanium nitride, tantalum, tantalumnitride or another suitable material. In some embodiments, a thicknessof the diffusion barrier layer ranges from about 50 nm to about 200 nm.If the thickness of the diffusion barrier layer is too large, a size ofsemiconductor device 300 is needlessly increased, in some instances. Ifthe thickness of diffusion barrier layer is too small, the diffusionbarrier layer does not provide a sufficient barrier to prevent diffusionof material from bump structure 340 to RDL 108, in some instances.

In some embodiments, UBM layer 350 extends along a top surface of secondpassivation layer 110. In some embodiments, UBM layer 350 exposes anentire surface of second passivation layer 110.

FIG. 4 is a flow chart of a method 400 of making a semiconductor devicein accordance with some embodiments. In some embodiments, method 400 isused to form semiconductor device 100 (FIG. 1), semiconductor device 200(FIG. 2A); semiconductor device 200′ (FIG. 2B), or semiconductor device300 (FIG. 3). In operation 402, an opening is defined in a firstpassivation layer to expose a top conductive layer. In some embodiments,top conductive layer is called top metal layer. The opening in the firstpassivation layer is formed by an etching process. In some embodiments,an etch stop layer is between the first passivation layer and the topconductive layer. In some embodiments, the etching process includes amultiple-step etching process. In some embodiments, the etching processforms tapered sidewalls of the opening. In some embodiments, thesidewalls of the opening are substantially perpendicular to a topsurface of the top conductive layer. In some embodiments, a thickness ofthe first passivation layer ranges from about 300 nm to about 1900 nm.In some embodiments, the thickness of the first passivation layer rangesfrom about 500 nm to about 1500 nm. The thickness of the firstpassivation layer at this stage is larger than the thickness of firstpassivation layer 104 (FIG. 1) because a later planarization processwill reduce the thickness of the first passivation layer to match thatof first passivation layer 104.

In operation 404, a first conductive material is plated over the firstpassivation layer and fills the opening. The first conductive materialcompletely fills the opening and extends along a top surface of thefirst passivation layer. In some embodiments, the first conductivematerial includes copper or copper alloys. In some embodiments, theplating process includes electro-chemical plating (ECP). In someembodiments, a thickness of the first conductive material ranges fromabout 450 nm to about 2150 nm. In some embodiments, the thickness of thefirst conductive material ranges from about 600 nm to about 1600 nm. Ifthe thickness of the first conductive material is too small, the firstconductive material does not completely fill the opening in the firstpassivation layer, in some instances. If the thickness of the firstconductive material is too large, material is needlessly wasted andproduction costs increase, in some instances.

In operation 406, the first conductive material is planarized. The firstconductive material is planarized so that a top surface of theplanarized first conductive material is co-planar with a top surface ofthe planarized first passivation layer. The planarization processremoves a portion of the first passivation layer and reduces a height ofthe first conductive material in the opening. In some embodiments, athickness of the planarized first passivation layer ranges from about200 nm to about 1800 nm. In some embodiments, the thickness of theplanarized first passivation layer ranges from about 400 nm to about1200 nm. In some embodiments, a thickness of the planarized firstconductive material ranges from about 200 nm to about 1800 nm. In someembodiments, the thickness of the planarized first conductive rangesfrom about 400 nm to about 1200 nm. In some embodiments, theplanarization process is a chemical-mechanical planarization (CMP)process. In some embodiments, the planarization process is an etchingprocess. In some embodiments, the planarization process is a combinationof a CMP process and an etching process.

In operation 408, a second conductive material is deposited over thefirst passivation layer. The second conductive material is electricallyconnected to the first conductive material. A bottom surface of thesecond conductive material is co-planar with a top surface of the firstpassivation layer because of the planarization process in operation 406.In some embodiments, the second conductive material extends along anentirety of the first passivation layer. The second conductive materialis different from the first conductive material. In some embodiments,the second conductive material includes aluminum. In some embodiments,the second conductive material includes tungsten, gold or anothersuitable material. The deposition process is different from the platingprocess of operation 404. In some embodiments, the second conductivematerial is deposited using a sputtering process. In some embodiments,the second conductive material is deposited using PVD, CVD or anothersuitable deposition process. In some embodiments, a thickness of thesecond conductive material ranges from about 700 nm to about 4200 nm. Insome embodiments, the thickness of the second conductive material rangesfrom about 1000 nm to about 3600 nm. A top surface of the secondconductive material over the first conductive material is substantiallyflat.

In operation 410, the second conductive material is patterned to definean RDL. The second conductive material is patterned using an etchingprocess. A photoresist material is deposited over the second conductivematerial and then the photoresist is patterned to define the shape ofthe RDL. The second conductive material is then etched to transfer thepattern of the photoresist to the second conductive material. Thepatterned second conductive material extends beyond the first conductivematerial on at least one side of the first conductive material. In someembodiments, the patterned second conductive material extends beyond thefirst conductive material on both sides of the first conductivematerial. In some embodiments, an edge of the patterned secondconductive material is aligned with an edge of the first conductivematerial.

In operation 412, a second passivation layer is coated onto the RDL. Thesecond passivation layer also coats the first passivation layer in areasof the first passivation layer exposed by the RDL. A top surface of thesecond passivation layer over the RDL is substantially flat. The secondpassivation layer over the first conductive material is free of voids.In some embodiments, the second passivation layer is formed by spin-oncoating, PVD, CVD, sputtering or another suitable formation process.

In some embodiments, at least one operation of method 400 is removed.For example, in some embodiments, operation 410 is removed if the secondconductive material is not blanket deposited onto the first passivationlayer. In some embodiments, additional operations are added to method400. For example, in some embodiments, method 400 includes operationsfor exposing a landing region of the RDL and forming a bump structure onthe landing region. In some embodiments, an order of operations ofmethod 400 is adjusted. For example, in some embodiments, the secondpassivation layer is coated on the second conductive material before thesecond conductive material is patterned, and then an additional coatingof the second passivation layer is applied to cover sidewalls of thepatterned second conductive material.

FIG. 5A is a cross-sectional view of a semiconductor device 500following formation of an opening in a first passivation layer.Semiconductor device 500 is similar to semiconductor device 100 andincludes some of the same elements. Same elements have a same referencenumber. An opening 550 is formed in first passivation layer 104. Opening550 has tapered sidewalls. In some embodiments, opening 550 hassidewalls substantially perpendicular to a top surface of top metallayer 102.

FIG. 5B is a cross-sectional view of a semiconductor device 500′following plating of a first conductive material. Semiconductor device500′ is similar to semiconductor device 100 and includes some of thesame elements. Same elements have a same reference number. The platedfirst conductive material includes RDL via 106 as well as firstconductive material 560 extending along a top surface of firstpassivation layer 104.

FIG. 5C is a cross-sectional view of a semiconductor device 500″following planarization of the first conductive material. Semiconductordevice 500″ is similar to semiconductor device 100 and includes some ofthe same elements. Same elements have a same reference number. Incomparison with semiconductor device 500′, semiconductor device 500″does not include first conductive material 560 over first passivationlayer 104. A thickness of first passivation layer 104 and a thickness ofRDL via 106 in semiconductor device 500″ is less than the thicknesses insemiconductor device 500′ as a result of the planarization process, insome embodiments.

FIG. 5D is a cross-sectional view of a semiconductor device 500*following deposition of a second conductive material. Semiconductordevice 500* is similar to semiconductor device 100 and includes some ofthe same elements. Same elements have a same reference number. Thedeposited second conductive material 570 extends along an entire topsurface of first passivation layer 104 and electrically connects to RDLvia 106.

FIG. 5E is a cross-sectional view of a semiconductor device500{circumflex over ( )} during patterning of the second conductivematerial. Semiconductor device 500{circumflex over ( )} is similar tosemiconductor device 100 and includes some of the same elements. Sameelements have a same reference number. A photoresist 580 is formed overdeposited second conductive material 570 and patterned to define a shapeof an RDL.

FIG. 5F is a cross-sectional view of a semiconductor device 500#following patterning of the second conductive material. Semiconductordevice 500# is similar to semiconductor device 100 and includes some ofthe same elements. Same elements have a same reference number. Depositedsecond conductive material 570 is patterned to form RDL 108. Photoresist580 is also removed. In some embodiments, photoresist 580 is removedusing an ashing process.

One aspect of this description relates to a method of making asemiconductor device. The method includes plating a first conductivematerial over a first passivation layer, wherein the first conductivematerial fills an opening in the first passivation layer andelectrically connects to an interconnect structure. The method furtherincludes planarizing the first conductive material, wherein a topsurface of the planarized first conductive material is coplanar with atop surface of the first passivation layer. The method further includesdepositing a second conductive material over the first passivationlayer, wherein the second conductive material is different from thefirst conductive material, and the second conductive material iselectrically connected to the first conductive material in the opening.The method further includes patterning the second conductive material todefine a redistribution line (RDL). In some embodiments, the methodfurther includes depositing a second passivation layer over the RDL,wherein a top surface of the second passivation layer is flat. In someembodiments, the method further includes depositing a second passivationlayer over the RDL, wherein the second passivation layer is free ofvoids. The method the planarizing of the first conductive materialcomprises reducing a thickness of the first passivation layer.

Another aspect of this description relates to a method of making asemiconductor device. The method includes depositing a first passivationlayer over a substrate. The method further includes patterning the firstpassivation layer to define an opening. The method further includesplating a first conductive material over the first passivation layer tofill the opening, wherein the first conductive material covers a topsurface of the first passivation layer outside of the opening. Themethod further includes planarizing the first conductive material toexpose the top surface of the first passivation layer outside of theopening. The method further includes depositing a second conductivematerial over the planarized first conductive material, wherein thesecond conductive material is different from the first conductivematerial. The method further includes patterning the second conductivematerial to define a redistribution line (RDL). In some embodiments, thedepositing the second conductive material is a different process fromthe planting of the first conductive material. In some embodiments, thepatterning of the first passivation layer includes defining a firstopening and a second opening, the first opening is spaced from thesecond opening, and the plating of the first conductive materialcomprises filling both the first opening and the second opening. In someembodiments, the patterning of the first passivation layer includesdefining the first opening exposing a first interconnect structure; anddefining the second opening exposing a second interconnect structure,wherein the first interconnect structure is separated from the secondinterconnect structure by a dielectric layer. In some embodiments, themethod further includes depositing a second passivation layer over thesecond conductive material, wherein the second passivation layerdirectly contacts at least a portion of the first passivation layer. Insome embodiments, the depositing of the second passivation layerincludes forming at least one convex sidewall of the second passivationlayer. In some embodiments, the depositing of the second passivationlayer includes forming the at least one convex sidewall above thepatterning second conductive material. In some embodiments, the methodfurther includes forming a bump structure over the RDL. In someembodiments, the forming of the bump structure includes forming the bumpstructure spaced from the first conductive material in a directionparallel to the top surface of the first passivation layer.

Still another aspect of this description relates to a method of making asemiconductor device. The method further includes depositing a firstpassivation layer over a substrate. The method further includespatterning the first passivation layer to define at least one opening.The method further includes plating copper over the first passivationlayer to fill the at least one opening, wherein the copper covers a topsurface of the first passivation layer outside of the at least oneopening. The method further includes planarizing the copper to exposethe top surface of the first passivation layer outside of the at leastone opening. The method further includes depositing aluminum directlyover the planarized copper. The method further includes patterning thealuminum to define a redistribution line (RDL). The method furtherincludes depositing a second passivation layer over the RDL, wherein thesecond passivation layer directly contacts a top surface of the RDL anda sidewall of the RDL. In some embodiments, the depositing of the secondpassivation layer includes forming a convex sidewall of the secondpassivation layer above the RDL. In some embodiments, the patterning ofthe aluminum includes defining a top surface of the RDL parallel to abottom surface of the RDL. In some embodiments, the patterning of thealuminum includes defining a first sidewall of the RDL angled withrespect to a second sidewall of the RDL. In some embodiments, thepatterning of the first passivation layer includes defining a pluralityof openings, and each opening of the plurality of openings exposes adifferent interconnect structure. In some embodiments, the patterning ofthe first passivation layer includes defining a plurality of openings, afirst opening of the plurality of openings exposes an interconnectstructure, and a second opening of the plurality of openings exposes theinterconnect structure. In some embodiments, the method further includesforming a bump structure over the RDL, wherein the bump structure isoffset from the planarized copper.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method of making a semiconductor device, themethod comprising: plating a first conductive material over a firstpassivation layer, wherein the first conductive material fills anopening in the first passivation layer and electrically connects to aninterconnect structure; planarizing the first conductive material,wherein a top surface of the planarized first conductive material iscoplanar with a top surface of the first passivation layer; depositing asecond conductive material over the first passivation layer, wherein thesecond conductive material is different from the first conductivematerial, and the second conductive material is electrically connectedto the first conductive material in the opening; patterning the secondconductive material to define a redistribution line (RDL); anddepositing a second passivation layer over the patterned secondconductive material, wherein a sidewall of the second passivation layerhas a convex curved shape extending beyond an edge of the RDL, and athickness of the second passivation layer above the patterned secondconductive material is substantially uniform.
 2. The method of claim 1,wherein a top surface of the second passivation layer is flat.
 3. Themethod of claim 1, wherein the second passivation layer is free ofvoids.
 4. The method of claim 1, wherein planarizing the firstconductive material comprises reducing a thickness of the firstpassivation layer.
 5. A method of making a semiconductor device, themethod comprising: depositing a first passivation layer over asubstrate; patterning the first passivation layer to define an opening;plating a first conductive material over the first passivation layer tofill the opening, wherein the first conductive material covers a topsurface of the first passivation layer outside of the opening;planarizing the first conductive material to expose the top surface ofthe first passivation layer outside of the opening; depositing a secondconductive material over the planarized first conductive material,wherein the second conductive material is different from the firstconductive material; patterning the second conductive material to definea redistribution line (RDL); and depositing a second passivation layerover the RDL, wherein depositing the second passivation layer comprisesforming a plurality of convex sidewalls, and each of the plurality ofconvex sidewalls extends beyond an edge of the RDL.
 6. The method ofclaim 5, wherein the depositing the second conductive material is adifferent process from the plating of the first conductive material. 7.The method of claim 5, wherein the patterning of the first passivationlayer comprises defining a first opening and a second opening, the firstopening is spaced from the second opening, and the plating of the firstconductive material comprises filling both the first opening and thesecond opening.
 8. The method of claim 7, wherein the patterning of thefirst passivation layer comprises: defining the first opening exposing afirst interconnect structure; and defining the second opening exposing asecond interconnect structure, wherein the first interconnect structureis separated from the second interconnect structure by a dielectriclayer.
 9. The method of claim 5, wherein the second passivation layerdirectly contacts at least a portion of the first passivation layer. 10.The method of claim 9, wherein the depositing of the second passivationlayer comprises depositing the second passivation layer over an entiretyof the RDL.
 11. The method of claim 10, wherein the depositing of thesecond passivation layer comprises forming the at least one convexsidewall of the plurality of convex sidewalls above the RDL.
 12. Themethod of claim 5, further comprising forming a bump structure over theRDL.
 13. The method of claim 12, wherein the forming of the bumpstructure comprises forming the bump structure spaced from the firstconductive material in a direction parallel to the top surface of thefirst passivation layer.
 14. A method of making a semiconductor device,the method comprising: depositing a first passivation layer over asubstrate; patterning the first passivation layer to define at least oneopening; plating copper over the first passivation layer to fill the atleast one opening, wherein the copper covers a top surface of the firstpassivation layer outside of the at least one opening; planarizing thecopper to expose the top surface of the first passivation layer outsideof the at least one opening; depositing aluminum directly over theplanarized copper; patterning the aluminum to define a redistributionline (RDL); and depositing a second passivation layer over the RDL,wherein the second passivation layer directly contacts a top surface ofthe RDL and a sidewall of the RDL, depositing the second passivationlayer comprises forming a plurality of convex sidewalls, and at leastone of the plurality of convex sidewalls extends beyond an edge of theRDL.
 15. The method of claim 14, wherein the depositing of the secondpassivation layer comprises forming the plurality of convex sidewallsabove the RDL.
 16. The method of claim 14, wherein the patterning of thealuminum comprises defining a top surface of the RDL parallel to abottom surface of the RDL.
 17. The method of claim 14, wherein thepatterning of the aluminum comprises defining a first sidewall of theRDL angled with respect to a second sidewall of the RDL.
 18. The methodof claim 14, wherein the patterning of the first passivation layercomprises defining a plurality of openings, and each opening of theplurality of openings exposes a different interconnect structure. 19.The method of claim 14, wherein the patterning of the first passivationlayer comprises defining a plurality of openings, a first opening of theplurality of openings exposes an interconnect structure, and a secondopening of the plurality of openings exposes the interconnect structure.20. The method of claim 14, further comprising forming a bump structureover the RDL, wherein the bump structure is offset from the planarizedcopper.